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AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

✍ Scribed by Rajan, Siddharth (author);Xing, Huili (author);DenBaars, Steve (author);Mishra, Umesh K. (author);Jena, Debdeep (author)

Book ID: 120460075
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 349 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1652254

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