Dislocations in silicon observed by high
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K. Hiraga; M. Hirabayashi; M. Sato; K. Sumino
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Article
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1982
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John Wiley and Sons
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English
⚖ 600 KB
## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato