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Dislocations in silicon observed by high-voltage, high-resolution electron microscopy

✍ Scribed by K. Hiraga; M. Hirabayashi; M. Sato; K. Sumino

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
600 KB
Volume
17
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in atomic level. The results demonstrated the potentiality of highvoltage, high‐resolution electron microscopy for the study of atomic configurations of structural defects.

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## Abstract The present study correlates the ultrastructural morphology of junctional complexes as revealed by transmission electron microscopy (TEM) with that observed by high‐resolution scanning electron microscopy (HRSEM), thanks to a new modification of the osmium tetroxide maceration technique