## Abstract Dislocations in deformed silicon crystals have been studied by highβresolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Zβshape faulted dipoles and stacking fault tetrahedra were observed in ato
β¦ LIBER β¦
Direct observation of crystallization in silicon by in situ high-resolution electron microscopy
β Scribed by R. Sinclair; J. Morgiel; A.S. Kirtikar; I.-W. Wu; A. Chiang
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 727 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0304-3991
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