We show that non-polar M-plane and A-plane GaN can be grown on LiGaO 2 with very high phase purity. The morphology of the GaN surfaces is influenced by the underlying substrate morphology, which exhibits a high abundance of surface scratches. Nevertheless, the root-mean-square roughness of the sampl
β¦ LIBER β¦
Microstructure of non-polar GaN on LiGaO2grown by plasma-assisted MBE
β Scribed by Cheng-Hung Shih; Teng-Hsing Huang; Ralf Schuber; Yen-Liang Chen; Liuwen Chang; Ikai Lo; Mitch MC Chou; Daniel M Schaadt
- Book ID
- 115021132
- Publisher
- Springer-Verlag
- Year
- 2011
- Tongue
- English
- Weight
- 468 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1931-7573
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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic