Electrical properties of GaN grown on a-
Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy
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Jongmin Kim; Keun Man Song; Seong Ju Bae; Chan Soo Shin; Chul Gi Ko; Bo Hyun Kon
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Article
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2011
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Elsevier Science
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English
⚖ 859 KB
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe