Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE

✍ Scribed by R. Schuber; Y.L. Chen; C.H. Shih; T.H. Huang; P. Vincze; I. Lo; L.W. Chang; Th. Schimmel; M.M.C. Chou; D.M. Schaadt

• Book ID: 104022110
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 638 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.10.118

✦ Synopsis

We show that non-polar M-plane and A-plane GaN can be grown on LiGaO 2 with very high phase purity. The morphology of the GaN surfaces is influenced by the underlying substrate morphology, which exhibits a high abundance of surface scratches. Nevertheless, the root-mean-square roughness of the samples is low, i.e. 2.9 nm for M-plane GaN and 10 nm for A-plane GaN. The predominant defects in the GaN films are threading dislocations and stacking faults.