✦ LIBER ✦

Micronic n-channel MOSFET degradation under strong and short-time hot-carrier stress

✍ Scribed by F. Djahli; C. Plossu; B. Balland

Book ID: 103953114
Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 436 KB
Volume: 15
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(92)90050-j

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the time-dependent degradation of LDD

On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress

✍ D.S Ang; C.H Ling 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 279 KB

A new hot-carrier induced degradation mo

A new hot-carrier induced degradation mode under low gate and drain bias stresses in n-channel MOSFETs

✍ Masakazu Shimaya; Shigeo Ogawa; Noboru Shiono 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 349 KB

Channel hot-carrier degradation under AC

Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

✍ E. Amat; R. Rodríguez; M. Nafría; X. Aymerich 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 350 KB

Low frequency noise in short-channel MOS

Low frequency noise in short-channel MOSFET's degraded by Fowler-Nordheim and Hot-Carrier Injection

✍ Jen-Tai Hsu; Xiaoyu Li; C.R. Viswanathan 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 308 KB

Comparison of gate-edge effects on the h

Comparison of gate-edge effects on the hot-carrier induced degradation of LDD N- and P-channel MOSFETs

✍ Y. Pan; K.K. Ng; V. Kwong 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Hot-carrier reliability study of second

Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

✍ A. Bravaix; D. Goguenheim; N. Revil; E. Vincent 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 232 KB

The hot-carrier degradation induced by first-and second-impact ionization events is compared in advanced N-MOSFETs used for digital applications with a 3.2-nm gate-oxide thickness. Results show that the substrate enhanced electron injection (SEEI) mechanism is still increased in 0.15-mm channel leng