✦ LIBER ✦

On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress

✍ Scribed by D.S Ang; C.H Ling

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Time dependence of hot-carrier degradati

✍ Q. Wang; W.H. Krautschneider; M. Brox; W. Weber 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 193 KB

Micronic n-channel MOSFET degradation un

✍ F. Djahli; C. Plossu; B. Balland 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 436 KB

Stress-bias dependence of hot-carrier-in

✍ Michael R. Trocino; Kuan-Yu Fu; Ker-Wen Teng 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 266 KB

An analytical model for hot-carrier-indu

✍ Jung-Suk Goo; Young-Gwan Kim; Hyeokjae L'Yee; Ho-Yup Kwon; Hyungsoon Shin 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 595 KB

Comparison of gate-edge effects on the h

✍ Y. Pan; K.K. Ng; V. Kwong 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Characterization of the gate oxide thick

✍ Y. Pan; K.K. Ng 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 532 KB