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Micro-Raman scattering study of Ga1−xMnxAs

✍ Scribed by W Limmer; M Glunk; W Schoch; A Köder; R Kling; R Sauer; A Waag

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
107 KB
Volume
13
Category
Article
ISSN
1386-9477

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✦ Synopsis

Ga1-xMnxAs layers with Mn concentrations 0% 6 x 6 2:7% grown on GaAs(0 0 1) substrates by low temperature molecular beam epitaxy were studied using micro-Raman spectroscopy. The layers were identiÿed as p-type and an estimate of the hole densities was made by a full line shape analysis of the coupled plasmon-LO-phonon modes. The line width of the TO-phonon mode as a function of the Mn concentration was determined by spatially resolved measurements on cleaved (1 1 0) side faces.

📜 SIMILAR VOLUMES

Electronic structure of Ga1−xMnxAs studi
Electronic structure of Ga1−xMnxAs studied by angle-resolved photoemission spectroscopy
✍ J. Okabayashi; A. Kimura; O. Rader; T. Mizokawa; A. Fujimori; T. Hayashi; M. Tan 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 130 KB

We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The e ect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaA