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Disorder activated Raman scattering in Ga1−xAlxAs alloys

✍ Scribed by N. Saint-Cricq; R. Carles; J.B. Renucci; A. Zwick; M.A. Renucci

Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
297 KB
Volume
39
Category
Article
ISSN
0038-1098

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Characterization of MBE-grown Ga1−xAlxAs
Characterization of MBE-grown Ga1−xAlxAs alloy films by Raman scattering
✍ Hou, Y. T.; Feng, Z. C.; Li, M. F.; Chua, S. J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

## Molecular beam epitaxy (MBE)-grown ternary Ga 1-x Al x As films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced