Raman study of phonons in Ga1−xAlxAs
✍ Scribed by D. J. Lockwood; R. Radomski; Z. Wasilewski
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 541 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0377-0486
- DOI
- 10.1002/jrs.851
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📜 SIMILAR VOLUMES
## Molecular beam epitaxy (MBE)-grown ternary Ga 1-x Al x As films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced
A semi-empirical method for calculating the room temperature refractive index of Gaa-x Alx As at energies below the direct band edge is presented. This quantity is important in the design of GaAs heterostructure lasers as well as other wave-guiding devices using these materials. The calculated value