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Raman study of phonons in Ga1−xAlxAs

✍ Scribed by D. J. Lockwood; R. Radomski; Z. Wasilewski


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
541 KB
Volume
33
Category
Article
ISSN
0377-0486

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Characterization of MBE-grown Ga1−xAlxAs
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## Molecular beam epitaxy (MBE)-grown ternary Ga 1-x Al x As films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced

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