Ferromagnetic Resonance Study of Ga1−xMnxAs Fabricated on
✍ Scribed by Y. Y. Zhou; X. Liu; J. K. Furdyna; M. A. Scarpulla; O. D. Dubon
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 455 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0896-1107
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Ga1-xMnxAs layers with Mn concentrations 0% 6 x 6 2:7% grown on GaAs(0 0 1) substrates by low temperature molecular beam epitaxy were studied using micro-Raman spectroscopy. The layers were identiÿed as p-type and an estimate of the hole densities was made by a full line shape analysis of the couple
## Abstract We have fabricated magnetic III–V compound semiconductor resonant tunnelling diodes (RTD's) based on a (Ga, Mn)As material system. The RTD's contain a ferromagnetic Mn‐doped emitter, where the Mn‐concentration was chosen on both sides of the metal–insulator (M–I) transition. The measure
We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The e ect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaA