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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

✍ Scribed by Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y.

Book ID: 120200026
Publisher: American Institute of Physics
Year: 1986
Tongue: English
Weight: 411 KB
Volume: 48
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.96549

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