✦ LIBER ✦

Structural evolution of AlN buffer and crystal quality of GaN films on a- and c-sapphire grown by metalorganic vapor phase epitaxy

✍ Scribed by Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Tanaka, Shigeyasu; Amano, Hiroshi

Book ID: 120020347
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 673 KB
Volume: 10
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201200587

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nitridating r-plane sapphire to improve

Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy

✍ Ma, Bei; Hu, Weiguo; Miyake, Hideto; Hiramatsu, Kazumasa 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 818 KB

Luminescence studies of GaN grown on GaN

Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition

✍ Turnbull, D. A.; Li, X.; Gu, S. Q.; Reuter, E. E.; Coleman, J. J.; Bishop, S. G. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 483 KB

Optical and structural analysis of ZnCdO

Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

✍ Gruber, Th.; Kirchner, C.; Kling, R.; Reuss, F.; Waag, A.; Bertram, F.; Forster, 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 486 KB

Substrate Misorientation Dependence of t

Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic GaN Films Grown by Metalorganic Vapor Phase Epitaxy

✍ Nagayama, A. ;Katayama, R. ;Nakadan, N. ;Miwa, K. ;Yaguchi, H. ;Wu, J. ;Onabe, K 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 208 KB 👁 2 views

The metalorganic vapor phase epitaxial (MOVPE) growth of cubic GaN layers on misoriented GaAs (001) substrates, the faces of which were tilted from (001) toward [1 " 10] or [110] by 4 , was performed in order to investigate the effect of the substrate misorientation on the inclusion of hexagonal pha

Structural and morphological evolution o

Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

✍ B. Moran; F. Wu; A.E. Romanov; U.K. Mishra; S.P. Denbaars; J.S. Speck 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 651 KB

Characterization of Crack-Free AlN/GaN M

Characterization of Crack-Free AlN/GaN Multiple Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy Using H2 as a Carrier Gas

✍ I. Waki; C. Kumtornkittikul; K. Sato; Y. Shimogaki; Y. Nakano 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 77 KB 👁 1 views