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Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy

✍ Scribed by Ma, Bei; Hu, Weiguo; Miyake, Hideto; Hiramatsu, Kazumasa

Book ID: 120010533
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 818 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3237164

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