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Metalorganic chemical vapor deposition of YBCO thin films on (100) MgO

โœ Scribed by W.J. DeSisto; E.S. Snow; C.L. Vold


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
309 KB
Volume
154
Category
Article
ISSN
0022-0248

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InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball