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Preparation and characterization of Bi2Ti2O7 thin films grown by metalorganic chemical vapor deposition

โœ Scribed by L.W. Fu; H. Wang; S.X. Shang; X.L. Wang; P.M. Xu


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
317 KB
Volume
139
Category
Article
ISSN
0022-0248

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ChemInform Abstract: Metalorganic Chemic
โœ S. L. STOLL; A. R. BARRON ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 33 KB ๐Ÿ‘ 2 views

InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball