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Growth of CaS thin films by solid source metalorganic chemical vapor deposition

✍ Scribed by R. Helbing; H Birecki; S.A. DiCarolis; R.S. Feigelson; R. Hiskes

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
348 KB
Volume
146
Category
Article
ISSN
0022-0248

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InSe films are grown at 230-420 β€’ C by low-pressure MOCVD from [(tBu) 2 In(Β΅-SetBu)] 2 and [(Me 2 EtC)In(Β΅ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures Β‘ 330 β€’ C ball