Mesotaxy by nickel diffusion into a buried amorphous silicon layer

✍ Scribed by Yu.N. Erokhin; R. Grötzschel; S.R. Oktyabrsky; S. Roorda; W. Sinke; A.F. Vyatkin

• Book ID: 103953319
• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 441 KB
• Volume: 12
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90267-d

✦ Synopsis

A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the "as-implanted" state. Prolonged heating at 350 °C leads to diffusion of metal atoms through the thin c-Si top layer followed by a chemical reaction with the buffed a-Si, forming buffed epitaxial silicide islands. These islands then move through the a-Si layer, leaving behind epitaxially crystallized silicon.