𝔖 Bobbio Scriptorium

✦ LIBER ✦

Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

✍ Scribed by Swantje Frühauf; Stefan E. Schulz; Thomas Gessner

Book ID: 111702215
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 353 KB
Volume: 18
Category: Article
ISSN: 0947-076X
DOI: 10.1002/vipr.200690028

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Das Integrationspotential mesoporöser Si

Das Integrationspotential mesoporöser SiO2-Schichten als ultra-low-k Dielektrikum. Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

✍ S. Frühauf; S.E. Schulz; Th. Gessner 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 214 KB

Effective Cu surface pre-treatment for h

Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)

✍ F. Ito; H. Shobha; M. Tagami; T. Nogami; S. Cohen; Y. Ostrovski; S. Molis; K. Ma 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 686 KB

[IEEE 2013 IEEE International Interconne

[IEEE 2013 IEEE International Interconnect Technology Conference - IITC - Kyoto, Japan (2013.06.13-2013.06.15)] 2013 IEEE International Interconnect Technology Conference - IITC - Reliable integration of robust porous ultra low-k (ULK) for the advanced BEOL interconnect

✍ Han, Kyu-Hee; Choi, Seungwook; Yim, Tae Jin; Choi, Seunghyuk; Baek, Jongmin; Ahn 📂 Article 📅 2013 🏛 IEEE ⚖ 577 KB

[IEEE IEEE 2002 International Interconne

[IEEE IEEE 2002 International Interconnect Technology Conference - Burlingame, CA, USA (3-5 June 2002)] Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519) - Low-resistivity PVD α-tantalum: phase formation and integration in ultra-low k dielectric/copper damascene structures

✍ Donohue, H.; Gris, H.; Yeoh, J.C.; Buchanan, K. 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 200 KB