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Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)

✍ Scribed by F. Ito; H. Shobha; M. Tagami; T. Nogami; S. Cohen; Y. Ostrovski; S. Molis; K. Maloney; J. Femiak; J. Protzman; T. Pinto; E.T. Ryan; A. Madan; C.-K. Hu; T. Spooner

Book ID: 113797743
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 686 KB
Volume: 92
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.01.077

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Effective Cu surface pre-treatment for high-reliable 22&#xa0;nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k&#xa0;=&#xa0;2.2)

Effective Cu surface pre-treatment for high-reliable 22 nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k = 2.2)