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Melt-interface mechanism for generation of silicon carbide microdefects in silicon

โœ Scribed by Kalejs, J.P.; Chalmers, B.


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
536 KB
Volume
79
Category
Article
ISSN
0022-0248

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Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place