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Role and mechanism of the formation of hydrogen-induced interface states for platinum/silicon oxide/silicon MOS tunnelling diodes

✍ Scribed by Hikaru Kobayashi; Hidenori Iwadate; Yoshihiro Nakato


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
423 KB
Volume
25
Category
Article
ISSN
0925-4005

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