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Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy

✍ Scribed by I.A. Buyanova; W.M. Chen; G. Pozina; B. Monemar; H.P. Xin; C.W. Tu


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
140 KB
Volume
216
Category
Article
ISSN
0370-1972

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Large-area plan-view sample preparation
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## Abstract We describe a method for plan‐view transmission electron microscopy (TEM) sample preparation that takes advantage of extreme etch‐rate selectivity in GaAs and AlAs in HF/H~2~O solutions. GaAs/In~x~Ga~1‐x~As/GaAs strained‐layer films (x = 0.05, 0.10, 0.19, 0.22) were chemically lifted of