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Measurement of the strain in strained-Si/Si0.79Ge0.21 with HRBS/channeling

✍ Scribed by T. Matsushita; W. Sakai; K. Nakajima; M. Suzuki; K. Kimura; A. Agarwal; H.-J. Gossmann; M. Ameen; H. Harima

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
268 KB
Volume
249
Category
Article
ISSN
0168-583X

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Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates
✍ N. Cherkashin; M.J. HΓΏtch; E. Snoeck; F. HΓΌe; J.M. Hartmann; Y. Bogumilowicz; A. πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 391 KB

This paper reports on quantitative measurements of strain in a 7.5 nm compressive strained Ge/5.1 nm tensile strained Si bi-layer grown by reduced pressure chemical vapour deposition on top of a relaxed Si 0.5 Ge 0.5 virtual substrate. Geometric phase analysis of high resolution transmission electro