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Measurement of resistivity of silicon epitaxial layers by the three-point probe technique

✍ Scribed by E.E. Gardner; P.A. Schumann Jr.

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
564 KB
Volume
8
Category
Article
ISSN
0038-1101

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For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi