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Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique

✍ Scribed by S. Hall; I.S. Goh; Z.Y. Wu

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 355 KB
Volume: 157
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)00377-0

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