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Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer

✍ Scribed by W.J. Patrick

Publisher
Elsevier Science
Year
1966
Tongue
English
Weight
635 KB
Volume
9
Category
Article
ISSN
0038-1101

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Influence of Profile Parameters on the I
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✍ Dipl.-Ing. Ch. Quick; Dr. E. Hild; Dr.-Ing. P. Schley; Dr.-Ing. J. Quick πŸ“‚ Article πŸ“… 1991 πŸ› John Wiley and Sons 🌐 English βš– 323 KB πŸ‘ 2 views

For IR thickness measurements of very thin silicon epitaxial layers (dep, < 3 pm) on silicon substrate the influence of the concentration profile of free carriers in the whole system is not negligible. The effects of most important profile parameters on the IR reflectance spectrum of silicon epitaxi