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Measurement of carrier concentration by i.r. reflectance: Si and GaAs

✍ Scribed by Vishnu Gopal


Publisher
Elsevier Science
Year
1981
Weight
199 KB
Volume
21
Category
Article
ISSN
0020-0891

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In-situ Determination of the Carrier Con
✍ Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.- πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 139 KB πŸ‘ 1 views

We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole