In-situ Determination of the Carrier Con
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Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.-
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Article
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2001
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John Wiley and Sons
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English
β 139 KB
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We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole