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In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy

✍ Scribed by Pristovsek, M. ;Tsukamoto, S. ;Koguchi, N. ;Han, B. ;Haberland, K. ;Zettler, J.-T. ;Richter, W. ;Zorn, M. ;Weyers, M.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 139 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:4<1423::aid-pssa1423>3.0.co;2-m

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✦ Synopsis

We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at

0 and an offset of the baseline of the whole spectrum. Using the empirical calibration in this paper, carrier concentrations above % 10 17 cm À3 can be easily measured by RAS for a given temperature, dopant and reconstruction.

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