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Hydrogen-Induced Modifications of GaAs(001) Surfaces Probed by Reflectance Anisotropy Spectroscopy

โœ Scribed by Richter, W. ;Pahlke, D. ;Arens, M. ;Esser, N.

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
229 KB
Volume
159
Category
Article
ISSN
0031-8965

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We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole