Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy

✍ Scribed by C.Y. Li; D.H. Zhang

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 280 KB
• Volume: 165
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(96)00159-5