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Measurement and modeling of drain current DLTS in enhancement SOI MOSFETs

✍ Scribed by H. Haddara; M.T. Elewa; S. Cristoloveanu


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
675 KB
Volume
24
Category
Article
ISSN
0026-2692

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πŸ“œ SIMILAR VOLUMES


Temperature dependence of drain current
✍ K. Hayama; K. Takakura; H. Ohyama; J.M. RafΓ­; A. Mercha; E. Simoen; C. Claeys πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 175 KB

The hysteresis characteristics of the drain current (I D ) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOS-FETs, taking into account the back gate