Temperature dependence of drain current hysteresis in FD and PD-SOI n-MOSFETs

✍ Scribed by K. Hayama; K. Takakura; H. Ohyama; J.M. Rafí; A. Mercha; E. Simoen; C. Claeys

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 175 KB
• Volume: 253
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.10.026

✦ Synopsis

The hysteresis characteristics of the drain current (I D ) in FD-SOI n-MOSFETs are examined at different back gate voltage and temperature. The relationship between the hysteresis and the temperature is discussed in comparison with the result for PD-SOI n-MOS-FETs, taking into account the back gate interface states. The I D hysteresis, which is defined as the difference of I D for V FG swept up and down, showed positive and negative peaks. The I D hysteresis peak height decreases with increasing temperature. Higher influence of the back interface states on the I D hysteresis for FD-SOI is observed than for PD-SOI by the comparison of the activation energies for decreasing I D hysteresis.