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Measured negative differential resistivity for GaN Gunn diodes on GaN substrate

✍ Scribed by Yilmazoglu, O.; Mutamba, K.; Pavlidis, D.; Karaduman, T.

Book ID
118252332
Publisher
The Institution of Electrical Engineers
Year
2007
Tongue
English
Weight
86 KB
Volume
43
Category
Article
ISSN
0013-5194

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High temperature pulsed measurements of
High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
✍ M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. GaquiΓ¨re πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 82 KB

## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote