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Thermal stability of N-polar n-type Ohmic contact for GaN-based light emitting diode on Si substrate

โœ Scribed by Junlin Liu; Feifei Feng; Jianli Zhang; Le Jiang; Fengyi Jiang


Book ID
113937276
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
378 KB
Volume
520
Category
Article
ISSN
0040-6090

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Electrical characteristics of In/ITO p-t
โœ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 ร‚ 10 -3 O cm 2 upon annealing at 650