Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode

✍ Scribed by Lin-An Yang; Yue Hao; Qingyang Yao; Jincheng Zhang

• Book ID: 114620370
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 327 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2105269