Fabrication of GaN light emitting diode membrane on Si substrate for MEMS applications
✍ Scribed by M. Wakui; H. Sameshima; F.-R. Hu; K. Hane
- Publisher
- Springer-Verlag
- Year
- 2010
- Tongue
- English
- Weight
- 420 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0946-7076
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## Abstract In order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteri
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