Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
โฆ LIBER โฆ
Dry etching characteristics of GaN for blue/green light-emitting diode fabrication
โ Scribed by K.H. Baik; S.J. Pearton
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 560 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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