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MBE grown Ge dots on Si/SiGe ion implanted buffers

✍ Scribed by P.I. Gaiduk; A. Nylandsted Larsen; J. Lundsgaard Hansen


Book ID
104428442
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
229 KB
Volume
17
Category
Article
ISSN
1386-9477

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Si 1Γ€x Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 β€’ 10 15 cm Γ€2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha