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Mathematical simulation of the kinetics of high-temperature silicon oxidation and the structure of the boundary layer in the Si-SiO2system

✍ Scribed by G. Ya. Krasnikov; N. A. Zaitsev; I. V. Matyushkin

Book ID: 110133426
Publisher: Springer
Year: 2003
Tongue: English
Weight: 74 KB
Volume: 37
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1538537

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