Magneto-Reflectivity of Gallium Nitride Epilayers

✍ Scribed by P.A. Shields; R.J. Nicholas; B. Beaumont; P. Gibart

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 157 KB
• Volume: 216
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199911)216:1<17::aid-pssb17>3.0.co;2-v

✦ Synopsis

We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magnetoexcitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges with reduced masses of (0.195 AE 0.01) m 0 and (0.180 AE 0.003) m 0 respectively. The field dependence of the A-exciton 1s and 2p states gives a reduced mass of (0.180 AE 0.005) m 0 , and (0.193 AE 0.005) m 0 is found with the B-exciton 1s state. The B exciton shows a clear spin splitting at 57 T, whereas no splitting of the A exciton is observed.