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Photoluminescence Studies of Mg-Doped and Si-Doped Gallium Nitride Epilayers

โœ Scribed by S. Hess; R.A. Taylor; J.F. Ryan; N.J. Cain; V. Roberts; J. Roberts

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
173 KB
Volume
210
Category
Article
ISSN
0370-1972

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โœ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 122 KB ๐Ÿ‘ 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100