Electrical Properties of the Si Implantation in Mg Doped p-GaN

✍ Scribed by Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian-Shih Tsang; Shih-Hsiung Chan

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 122 KB
• Volume: 216
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(199911)216:1<561::aid-pssb561>3.0.co;2-o

✦ Synopsis

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100, and 200 keV. The implantation dose is 5 Â 10 15 cm 2 for each implantation energy. After implantation, the samples were annealed in an N 2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000 o C,. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implant in p-GaN. In addition, the rectifying I±V characteristic of the p±n GaN diode is also examined.