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Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN

✍ Scribed by Leroux, M. ;Venn�gu�s, P. ;Dalmasso, S. ;Benaissa, M. ;Feltin, E. ;de Mierry, P. ;Beaumont, B. ;Damilano, B. ;Grandjean, N. ;Gibart, P.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 207 KB
Volume: 192
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200208)192:2<394::aid-pssa394>3.0.co;2-2

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