This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100
β¦ LIBER β¦
Electrical Properties of GaN Bulk Single Crystals Doped with Mg
β Scribed by E. Litwin-Staszewska; T. Suski; I. Grzegory; S. Porowski; P. Perlin; J.L. Robert; S. Contreras; D. Wasik; A. Witowski; D. Cote; B. Clerjaud
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 132 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
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