Magnetically enhanced inductively coupled plasma CVD for a-Si:H fabrication

✍ Scribed by M Murata; Y Takeuchi; S Nishida

• Book ID: 104265801
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 539 KB
• Volume: 48
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(96)00241-2

✦ Synopsis

Radio-frequency (73.56 MHz) excited SiH, plasma is produced with an electrode of a ladder-shaped antenna with rotating magnetic fields. The negative self-bias potential on the electrode, the SiH emission intensity and the deposition rate of a-Si:H films prepared on glass substrates are examined as a function of RF power for different rotating magnetic fields. It is found that when the rotating magnetic fields are applied to the SiH, plasma, the negative self-bias potential becomes low, while the SiH emission intensity and the deposition rate increase. It is also found that the higher the RF power, the better the uniformity of the a-Si:H film, which is desirable for the fabrication of solar cells and thin film transistors. Furthermore, the effect of rotating magnetic fields are discussed. It is found that drift motion plays an important role in determining increases in the deposition rate of a-Si:H films.