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Luminescence of (GaAl)As layers grown by temperature gradient liquid phase epitaxy

✍ Scribed by Dr. G. Kühn; Doz. A. Zehe; D. Sutter; Dr. P. Streubel; Prof. Dr. H. Neels

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
512 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

In this paper the growth of Al~x~Ga~1–x~As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of the light emitting diodes is supposed to depend on the AlAs content of the layers and to be connected with the diffusion of acceptors in the p‐n junction region.

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