## Abstract In this paper the growth of Al~x~Ga~1βx~As layers with nearly constant composition along their thickness is described. By means of electroluminescence and cathodoluminescence measurements recombination mechanisms connected with the presence of Si are discussed. The aging behaviour of th
The Characteristics of GaP Window Layer Grown by Indium-added Liquid Phase Epitaxy
β Scribed by L. Z. Hsieh; L. Y. Chang
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 157 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0232-1300
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